Impact of local atomic arrangements on ovonic threshold switching of amorphous Ge-As-Se thin films-Reference-Cited by-同舟云学术

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Impact of local atomic arrangements on ovonic threshold switching of amorphous Ge-As-Se thin films

Published:2022-11 Issue: Volume:220 Page:114899
ISSN:1359-6462
Container-title:Scripta Materialia
language:en
Short-container-title:Scripta Materialia

Author:

Shin Sang Yeol,Lee Suyeon,Cheong Byung-ki,Choi Yong Gyu

Funder

National Research Foundation of Korea

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science,Mechanics of Materials,Metals and Alloys,Mechanical Engineering

Reference32 articles.

1. Ovonic Threshold‐Switching Ge x Se y Chalcogenide Materials: Stoichiometry, Trap Nature, and Material Relaxation from First Principles

2. Ovonic threshold switching selectors for three-dimensional stackable phase-change memory

3. Device Design and Material Considerations of Ovonic Threshold Switch (OTS) for Cross-Point MRAM Array, 2019 Electron Devices Technology and Manufacturing Conference (EDTM), IEEE;Woo;Proc. EDTM,2019

4. Three-Terminal Ovonic Threshold Switch (3T-OTS) with Tunable Threshold Voltage for Versatile Artificial Sensory Neurons

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical characterization and dispersion discussions of the novel thermally evaporated thin a-S50-xGe10CdxTe40 films;Applied Physics A;2022-11

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