Local structure effects of carbon-doping on the phase change material Ge2Sb2Te5-Reference-Cited by-同舟云学术

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Local structure effects of carbon-doping on the phase change material Ge₂Sb₂Te₅

Published:2024 Issue:22 Volume:12 Page:7867-7877
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Langhout John D.¹^ORCID,Alverson Danielle N.¹^ORCID,Ginter Colton¹^ORCID,Ravel Bruce²^ORCID,Adams David P.³^ORCID,Butala Megan M.¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA

2. Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA

3. Sandia National Laboratories, Albuquerque, New Mexico 87185, USA

Abstract

In situ X-ray absorption spectroscopy on C-doped Ge2Sb2Te5 thin films reveals that C-content increases the rigidity of the Ge–Te bond in the amorphous phase, but curiously, only at moderate doping levels.

Funder

Sandia National Laboratories

Laboratory Directed Research and Development

University of Florida

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/TC/D4TC01082E

Reference53 articles.

1. A Review of Germanium-Antimony-Telluride Phase Change Materials for Non-Volatile Memories and Optical Modulators

2. Reliable Ge2Sb2Te5 based phase-change electronic synapses using carbon doping and programmed pulses

3. EXAFS study of local order in the amorphous chalcogenide semiconductor Ge2Sb2Te5

4. Understanding the phase-change mechanism of rewritable optical media

5. A review of compact modeling for phase change memory

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