1. T. Kim , H.Choi , M.Kim , J.Yi , D.Kim , S.Cho , H.Lee , C.Hwang , E. R.Hwang , J.Song , S.Chae , Y.Chun and J. K.Kim , Tech. Dig. – Int. Electron Devices Meet. IEDM, 2019, 2018-Decem, pp. 37.1.1–37.1.4
2. D. Kau , S.Tang , I. V.Karpov , R.Dodge , B.Klehn , J. A.Kalb , J.Strand , A.Diaz , N.Leung , J.Wu , S.Lee , T.Langtry , K. W.Chang , C.Papagianni , J.Lee , J.Hirst , S.Erra , E.Flores , N.Righos , H.Castro and G.Spadini , Tech. Dig. – Int. Electron Devices Meet. IEDM, 2009, pp. 1–4
3. Physics of switching and memory effects in chalcogenide glassy semiconductors
4. S. G. Park , M. K.Yang , H.Ju , D. J.Seong , J. M.Lee , E.Kim , S.Jung , L.Zhang , Y. C.Shin , I. G.Baek , J.Choi , H. K.Kang and C.Chung , in Technical Digest – International Electron Devices Meeting, IEDM, 2012
5. S. Yu , Y.Deng , B.Gao , P.Huang , B.Chen , X.Liu , J.Kang , H. Y.Chen , Z.Jiang and H. S. P.Wong , Proc. – IEEE Int. Symp. Circuits Syst., 2014, pp. 421–424