Mechanism of molten KOH+NaOH etching of GaN revealed by the slopes of etch pits formed at threading dislocations
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference46 articles.
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5. Defects in wide band-gap semiconductors: selective etching and calibration by complementary methods;Weyher;Eur. Phys. J. Appl. Phys.,2004
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