Characterization of wide-band-gap semiconductors (GaN, SiC) by defect-selective etching and complementary methods-Reference-Cited by-同舟云学术

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Characterization of wide-band-gap semiconductors (GaN, SiC) by defect-selective etching and complementary methods

Published:2006-10 Issue:4-6 Volume:40 Page:279-288
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Weyher J.L.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference64 articles.

1. Direct Observation of Dislocations;Amelinckx,1964

2. Principles of chemical etching-the art and science of etching crystals;Heimann,1982

3. Etching of Crystals;Sangwal,1987

4. Dislocation Etch Pits in Single Crystal GaAs

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