Defects in wide band-gap semiconductors: selective etching and calibration by complementary methods-Reference-Cited by-同舟云学术

Defects in wide band-gap semiconductors: selective etching and calibration by complementary methods

Published:2004-07 Issue:1-3 Volume:27 Page:37-41
ISSN:1286-0042
Container-title:The European Physical Journal Applied Physics
language:
Short-container-title:Eur. Phys. J. Appl. Phys.

Author:

Weyher J. L.,Macht L.

Publisher

EDP Sciences

Subject

Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://www.epjap.org/10.1051/epjap:2004092/pdf

Reference52 articles.

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2. J. L. Weyher, inHandbook on Semiconductors,edited by S. Mahajan (Elsevier, Amsterdam, 1994), Vol. 3, p. 995

3. J. L. Weyher, Inst. Phys. Conf. Ser.146, IOP 399 (1995)

4. GaN: Processing, defects, and devices

5. Etching of GaN Using Phosphoric Acid

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