Author:
Mosig K,Jacobs T,Brennan K,Rasco M,Wolf J,Augur R
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. The International Technology Roadmap for Semiconductors, Semiconductor Industry Association, San Jose, CA, 2001.
2. S. Lin, C. Jin, L. Lui, M.H. Tsai, M. Daniels, A. Gonzalez, J.T. Wetzel, K.A. Monnig, P.A. Winebarger, S. Jang, D. Yu, M.S. Liang, Low-k dielectrics characterisation for damascene integration, in: Proc. IITC 2001, IEEE, Piscataway, 2001, pp. 146–148.
3. K. Mosig, T. Jacobs, P. Kofron, M. Daniels, K. Brennan, A. Gonzales, R. Augur, J. Wetzel, R. Havermann, A. Shiota, Single and dual damascene integration of a spin-on porous ultra low-k material, in: Proc. IITC 2001, IEEE, Piscataway, 2001, pp. 292–294.
4. M. Hiroi, M. Tada, H. Ohtake, S. Saito, T. Onodera, N. Furutake, Y. Harada, Y. Hayashi, Dual hard mask process for low-k porous organosilica dielectric in copper dual damascene interconnect fabrication, in: Proc. IITC 2001, IEEE, Piscataway, 2001, pp. 295–297.
5. Integration of porous ultra low-k dielectric with CVD barriers;Mosig,2001
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