Low-k SiCOH Films Deposited with a Single Precursor 1,1,1,3,5,7,7,7 Octamethyl-3,5-Bis(trimethylsiloxy) Tetrasiloxane by Plasma Enhanced Chemical Vapor Deposition-Reference-Cited by-同舟云学术

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Low-k SiCOH Films Deposited with a Single Precursor 1,1,1,3,5,7,7,7 Octamethyl-3,5-Bis(trimethylsiloxy) Tetrasiloxane by Plasma Enhanced Chemical Vapor Deposition

Published:2020-04-01 Issue:4 Volume:20 Page:2301-2307
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:j nanosci nanotechnol

Author:

Kwon Sungyool¹,Park Yoonsoo²,Ban Wonjin³,Kim Younghyun⁴,Jang Junyoung²,Jung Donggeun²

Affiliation:

1. Research and Development TEAM, Applied Materials Korea, Icheon 17379, Republic of Korea

2. Department of Physics, Sungkyunkwan University, Suwon 16419, Republic of Korea

3. CVD/SPT Team, LG Display, Paju 10845, Republic of Korea

4. Research and Development MI TEAM, SK Hynix, Icheon 17336, Republic of Korea

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Etching characteristics of low-k SiCOH thin films under fluorocarbon-based plasmas;Vacuum;2022-08

2. Effects of He/H2 Plasma Treatment on Properties of SiCOH Films Deposited with the 1,1,1,3,5,7,7,7- Octamethyl-3,5-Bis(Trimethylsiloxy) Tetrasiloxane Precursor;Journal of Nanoscience and Nanotechnology;2020-11-01

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