Introduction
Publisher
Springer Singapore
Reference89 articles.
1. Alén P, Vehkamäki M, Ritala M, Leskelä M (2006) Diffusion barrier properties of atomic layer deposited ultrathin Ta2O5 and TiO2 films. J Electrochem Soc 153(4):G304–G308
2. Antonelli GA, Jiang G, Shaviv R, Mountsier T, Dixit G, Park KJ, Karim I, Wu W, Shobha H, Spooner T (2012) Synergistic combinations of dielectrics and metallization process technology to achieve 22 nm interconnect performance targets. Microelectron Eng 92:9–14
3. Arunagiri TN, Zhang Y, Chyan O, Kim MJ, Hurd TQ (2005a) Interfacial diffusion studies of Cu/(5 nm Ru)/Si structures physical vapor deposited vs electrochemically deposited Cu. J Electrochem Soc 152(11):G808–G812
4. Arunagiri TN, Zhang Y, Chyan O, El-Bouanani M, Kim MJ, Chen KH, Wu CT, Chen LC (2005b) 5 nm ruthenium thin film as a directly plateable copper diffusion barrier. Appl Phys Lett 86(8):83104
5. Baklanov M, Maex K, Green M (2007) Dielectric films for advanced microelectronics. Wileys, Hoboken