In Situ Electrochemical Behavior of Aluminum Chemical Mechanical Polishing at Low Down Pressure in Environmentally Friendly and Weakly Alkaline Slurry-Reference-Cited by-同舟云学术

In Situ Electrochemical Behavior of Aluminum Chemical Mechanical Polishing at Low Down Pressure in Environmentally Friendly and Weakly Alkaline Slurry

Published:2018 Issue:11 Volume:7 Page:P698-P705
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Liu Ping^ORCID,Wang Yongguang^ORCID,Zhao Yongwu,Bian Da,Zhu Yuguang,Niu Shiwei

Funder

National Natural Science Foundation of China (NSFC)

Tribology Science Fund of State Key Labroatory of Tribology

Scientific Research Foundation for the Ruturned Overseas Chinese Scholars, State Education Ministry

Fundamental Research Funds for the Central Universities

National First-class Discipline Program of Light Industry Technology and Engineering

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference37 articles.

1. Process development of high-k metal gate aluminum CMP at 28nm technology node

2. CMP Solutions for the Integration of High-K Metal Gate Technologies

3. A Material Removal Rate Model for Aluminum Gate Chemical Mechanical Planarization

4. Chemical Mechanical Polishing of Al-Co Films for Replacement Metal Gate Applications

5. Fundamental aspects of HfO2-based high-k metal gate stack reliability and implications on tinv-scaling

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