Evolution of Frenkel defect pairs in β-Ga2O3 thin film with the introduction of oxygen and its application in GaN-based ultraviolet light-emitting diode-Reference-Cited by-同舟云学术

Evolution of Frenkel defect pairs in β-Ga2O3 thin film with the introduction of oxygen and its application in GaN-based ultraviolet light-emitting diode

Published:2023-09 Issue: Volume:261 Page:119912
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Ding Bingxin,Xiang Guojiao,Zhang Jinming,Liu Yue,Zhang Jiahui,Yue Zhiang,Zhang Xian,Song Chengle,Jin Yidan,Wang Peiyao,Wang Haoqiang,Song Zihan,Bao Xinghan,Wang Zhiqi,Zhao Yang^ORCID,Wang Hui

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference54 articles.

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3. Creation and clustering of Frenkel defects at high density of electronic excitations in wide-gap materials;Lushchik;Nucl. Instrum. Methods B.,2012

4. Comparison study of β-Ga2O3 photodetectors grown on sapphire at different oxygen pressures;Huang;IEEE Photonic,2017

5. Effects of post-annealing temperature and oxygen concentration during sputtering on the structural and optical properties of β-Ga2O3 films;Dong;J. Vac. Sci. Technol. A,2016

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