Enhanced electroluminescence from n-ZnO NCs/n-Si isotype heterojunctions by using i-NiO as electron blocking layer-Reference-Cited by-同舟云学术

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Enhanced electroluminescence from n-ZnO NCs/n-Si isotype heterojunctions by using i-NiO as electron blocking layer

Published:2018-12 Issue: Volume:204 Page:5-9
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Li Zhuxin,Lu Qiuchun,Qi Chengjun,Mo Xiaoming,Zhou Yulu,Tao Xiaoma,Ouyang Yifang

Funder

National Natural Science Foundation of China

Scientific Research Project for Higher Education of Guangxi Zhuang Autonomous Region

Doctoral Scientific Research Foundation of Guangxi University

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference32 articles.

1. Solution-processed ZnO nanocrystals in thin-film light-emitting diodes for printed electronics

2. Toward near-white-light electroluminescence from n-ZnO nanocrystals/n-Si isotype heterojunctions via an AZO spectral scissor

3. Light-emitting diodes fabricated from small-size ZnO quantum dots

4. Enhanced ultraviolet electroluminescence and spectral narrowing from ZnO quantum dots/GaN heterojunction diodes by using high-k HfO2 electron blocking layer

5. Interfacial Emission Adjustment in ZnO Quantum Dots/p-GaN Heterojunction Light-Emitting Diodes

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1. Study on mechanical properties of ZnO/Si interface under thermal shock;Materials Today Communications;2024-08

2. X-Ray- and Synchrotron-Radiation Study of the Defect Structure of Epitaxial ZnO Films Grown by Magnetron Deposition on Al2O3 and LaMgAl11O19 Substrates with (0001) Orientation;Nanobiotechnology Reports;2024-02

3. Pure ultraviolet light-emitting diode based on the p-NiO/i-NiO/n-GaN structure by magnetron sputtering;Optical Materials;2023-11

4. Electrical study of ZnO film thickness effect on the evolution of interface potential barrier of ZnO/p-Si heterojunction: Contribution to transport phenomena study;Materials Science in Semiconductor Processing;2021-10

5. Stretching Effect on Resistive Switching of TiO2/ZnO n–n Heterojunction Films;The Journal of Physical Chemistry C;2020-11-05

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