Electrical study of ZnO film thickness effect on the evolution of interface potential barrier of ZnO/p-Si heterojunction: Contribution to transport phenomena study-Reference-Cited by-同舟云学术

Electrical study of ZnO film thickness effect on the evolution of interface potential barrier of ZnO/p-Si heterojunction: Contribution to transport phenomena study

Published:2021-10 Issue: Volume:133 Page:105971
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Chabane L.,Zebbar N.,Trari M.,Seba Y.H.,Kechouane M.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference32 articles.

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4. ZnO/GaN heterojunction based self-powered photodetectors: influence of interfacial states on UV sensing;Mishra;Appl. Surf. Sci.,2019

5. Low-temperature highly selective and sensitive NO2 gas sensors using CdTe-functionalized ZnO filled porous Si hybrid hierarchical nanostructured thin films;Jaiswal;Sensor. Actuator. B Chem.,2021

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