Study on mechanical properties of ZnO/Si interface under thermal shock-Reference-Cited by-同舟云学术

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Study on mechanical properties of ZnO/Si interface under thermal shock

Published:2024-08 Issue: Volume:40 Page:109874
ISSN:2352-4928
Container-title:Materials Today Communications
language:en
Short-container-title:Materials Today Communications

Author:

Liu Zhixiang,Lu Jiafeng,Fang Zhijie,Liu Dongjing,Yang Ping,Yang Shuhong,Tang Yunqing

Funder

China Postdoctoral Science Foundation

Taishan Scholar Foundation of Shandong Province

National Natural Science Foundation of China

Guangxi University Guangxi Key Laboratory of Manufacturing System and Advanced Manufacturing Technology

Publisher

Elsevier BV

Reference32 articles.

1. Development and characterization of photodiode n-ZnO/p-Si by Radio Frecuency Sputtering, a sensor with low voltage operation and its response to visible and UV light;Chávez-Urbiola;Thin Solid Films,2019

2. Ultrasensitive NH 3 gas sensor based on Au/ZnO/n-Si heterojunction schottky diode;Punetha;IEEE Trans. Electron Devices,2019

3. Metal-induced growth of crystal Si for low-cost Al: ZnO/Si heterojunction thin film photodetectors;Tong;Mater. Sci. Semicond. Process.,2018

4. Optimizing performance of silicon-based p-n junction photodetectors by the piezo-phototronic effect;Wang;ACS Nano,2014

5. ZnO/Si SAW convolver with surface-controlling junctions;Arimoto;Appl. Phys. Lett.,1977

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