X-Ray- and Synchrotron-Radiation Study of the Defect Structure of Epitaxial ZnO Films Grown by Magnetron Deposition on Al2O3 and LaMgAl11O19 Substrates with (0001) Orientation

Author:

Zhernova V. A.,Volkovsky Yu. A.,Folomeshkin M. S.,Seregin A. Yu.,Prosekov P. A.,Muslimov A. E.,Butashin A. V.,Ismailov A. M.,Grigoriev Yu. V.,Pisarevsky Yu. V.,Kanevsky V. M.,Blagov A. E.,Kovalchuk M. V.

Abstract

Abstract The results of studying the structural features of samples of zinc-oxide films obtained by magnetron deposition on chips of lanthanum-magnesium hexaaluminate and the surface of sapphire substrates with a gold buffer layer are presented. Analysis of the structure and morphology of the films is carried out using a set of methods, including high-resolution X-ray diffractometry, the method of constructing pole figures, and transmission electron microscopy. It is shown that when using cleavages of lanthanum-magnesium hexaaluminate, an epitaxial ZnO film is formed without signs of growth rotating domains. The use of a gold buffer layer during growth on sapphire substrates improves the crystalline quality of ZnO films, but does not completely suppress domain growth.

Publisher

Pleiades Publishing Ltd

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