Characterizations of low-temperature electroluminescence from ZnO nanowire light-emitting arrays on the p-GaN layer-Reference-Cited by-同舟云学术

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Characterizations of low-temperature electroluminescence from ZnO nanowire light-emitting arrays on the p-GaN layer

Published:2010-12-06 Issue:24 Volume:35 Page:4109
ISSN:0146-9592
Container-title:Optics Letters
language:en
Short-container-title:Opt. Lett.

Author:

Lu Tzu-Chun,Ke Min-Yung,Yang Sheng-Chieh,Cheng Yun-Wei,Chen Liang-Yi,Lin Guan-Jhong,Lu Yu-Hsin,He Jr-Hau,Kuo Hao-Chung,Huang JianJang

Funder

National Science Council of Taiwan (NSCT)

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference21 articles.

1. Structure study of electrodeposited ZnO nanowires

2. Nanostructured solar cell based on spray pyrolysis deposited ZnO nanorod array

3. Field emission from well-aligned zinc oxide nanowires grown at low temperature

4. Hydrothermal synthesis and photoluminescence properties of ZnO nanowires

5. Single ZnO Nanowire/p-type GaN Heterojunctions for Photovoltaic Devices and UV Light-Emitting Diodes

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2. Improvement of UV emission in ZnO thin film caused by a transition from polycrystalline to monocrystalline;Physica B: Condensed Matter;2020-04

3. Strain dependent anisotropy in photoluminescence of heteroepitaxial nonpolar a-plane ZnO layers;Optical Materials Express;2017-10-17

4. Improved ultraviolet emission performance from polarization-engineered n-ZnO/p-GaN heterojunction diode;Applied Physics Letters;2016-02-08

5. Electroluminescence of ordered ZnO nanorod array/p-GaN light-emitting diodes with graphene current spreading layer;Nanoscale Research Letters;2014-11-25

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