Improved ultraviolet emission performance from polarization-engineered n-ZnO/p-GaN heterojunction diode-Reference-Cited by-同舟云学术

Improved ultraviolet emission performance from polarization-engineered n-ZnO/p-GaN heterojunction diode

Published:2016-02-08 Issue:6 Volume:108 Page:063505
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Jiang Junyan¹,Zhang Yuantao¹,Chi Chen¹,Shi Zhifeng²,Yan Long¹,Li Pengchong¹,Zhang Baolin¹,Du Guotong¹

Affiliation:

1. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012, People's Republic of China

2. Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052, People's Republic of China

Funder

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4941230

Reference25 articles.

1. Room-Temperature Ultraviolet Nanowire Nanolasers

2. Low-Voltage UV-Electroluminescence from ZnO-Nanowire Array/p-GaN Light-Emitting Diodes

3. A hybrid green light-emitting diode comprised of n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN

4. Improvement of electroluminescence performance by integration of ZnO nanowires and single-crystalline films on ZnO/GaN heterojunction

5. High-performance ultraviolet-blue light-emitting diodes based on an n-ZnO nanowall networks/p-GaN heterojunction

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