ANALYSIS OF CRYSTAL DEFECTS AND DISTORTIONS
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Publisher
Elsevier
Reference191 articles.
1. Microstructural Analysis, Tools and Techniques;Armstrong,1975
2. Contrast of a Stacking Fault on X-Ray Topographs
3. Three‐Dimensional X‐Ray Topographic Studies of Internal Dislocation Sources in Silicon
4. X-Ray Dynamical Contrast of a Planar Defect
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1. Relationship between depth of basal-plane dislocations and expanded stacking faults by application of forward current to 4H–SiC p-i-n diodes;Applied Physics Express;2019-04-10
2. Structural analysis of interfacial dislocations and expanded single Shockley-type stacking faults in forward-current degradation of 4H-SiC p-i-n diodes;Japanese Journal of Applied Physics;2019-01-01
3. Influence of basal-plane dislocation structures on expansion of single Shockley-type stacking faults in forward-current degradation of 4H-SiC p–i–n diodes;Japanese Journal of Applied Physics;2018-02-26
4. Origin analysis of expanded stacking faults by applying forward current to 4H-SiC p–i–n diodes;Applied Physics Express;2017-07-11
5. Growth of Shockley type stacking faults upon forward degradation in 4H-SiC p-i-n diodes;Journal of Applied Physics;2016-03-07
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