Author:
Hayashi Shohei,Naijo Takanori,Yamashita Tamotsu,Miyazato Masaki,Ryo Mina,Fujisawa Hiroyuki,Miyajima Masaaki,Senzaki Junji,Kato Tomohisa,Yonezawa Yoshiyuki,Kojima Kazutoshi,Okumura Hajime
Funder
New Energy and Industrial Technology Development Organization
Subject
General Physics and Astronomy,General Engineering
Cited by
25 articles.
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1. AFM-sMIM Characterization of the Recombination-Enhancing Buffer Layer for Bipolar Degradation Free SiC MOSFETs;Solid State Phenomena;2024-08-26
2. Revisiting stacking fault identification based on the characteristic photoluminescence emission wavelengths of silicon carbide epitaxial wafers;Materials Science in Semiconductor Processing;2024-06
3. Characterization of partial dislocations for (3, 3, 4), (3, 3, 3, 3), and (3, 3, 2, 2, 4) stacking faults in 4H-SiC crystals;Journal of Crystal Growth;2023-12
4. Combined FEM and phase field method for reliability design of forward degradation in SiC bipolar device;Japanese Journal of Applied Physics;2023-10-01
5. Effects of surface roughness and single Shockley stacking fault expansion on the electroluminescence of 4H-SiC;Optics Continuum;2023-04-24