Funder
New Energy and Industrial Technology Development Organization
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by
13 articles.
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1. Stacking faults in 4H–SiC epilayers and IGBTs;Materials Science in Semiconductor Processing;2024-07
2. Review on Modeling and Mitigation of Bipolar Degradation in 4H-SiC;Power Electronic Devices and Components;2024-04
3. Characterization of partial dislocations for (3, 3, 4), (3, 3, 3, 3), and (3, 3, 2, 2, 4) stacking faults in 4H-SiC crystals;Journal of Crystal Growth;2023-12
4. Stacking Fault Expansion from an Interfacial Dislocation in a 4H-SiC PIN Diode and Its Expansion Process;Journal of Electronic Materials;2023-04-27
5. Influence of the facet trace region in 4H-SiC substrate on the glide and propagation behaviors of basal plane dislocations in 4H-SiC homoepitaxial layers;Journal of Applied Physics;2021-09-07