Funder
New Energy and Industrial Technology Development Organization
Subject
General Physics and Astronomy,General Engineering
Cited by
18 articles.
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1. Effects of proton implantation for expansion of basal plane dislocations in SiC toward suppression of bipolar degradation: review and perspective;Japanese Journal of Applied Physics;2024-01-15
2. Characterization of partial dislocations for (3, 3, 4), (3, 3, 3, 3), and (3, 3, 2, 2, 4) stacking faults in 4H-SiC crystals;Journal of Crystal Growth;2023-12
3. Three-dimensional micro-X-ray topography using focused sheet-shaped X-ray beam;Scientific Reports;2023-07-31
4. Role of the Growth Facet on the Generation and Expansion of Stacking Faults in PVT-Grown n-Type 4H-SiC Single-Crystal Boules;The Journal of Physical Chemistry C;2023-07-12
5. Reduction of Forward Bias Degradation in 4H-SiC PiN Diodes Fabricated on 4H-SiC Bonded Substrates;Key Engineering Materials;2023-06-06