Electrical and structural investigation of triangular defects in 4H-SiC junction barrier Schottky devices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3103308
Reference23 articles.
1. Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices
2. Correlation between morphological defects, electron beam-induced current imaging, and the electrical properties of 4H–SiC Schottky diodes
3. Breakdown degradation associated with elementary screw dislocations in 4H-SiC p+n junction rectifiers
4. Investigations of 3C-SiC inclusions in 4H-SiC epilayers on 4H-SiC single crystal substrates
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2. Effects of thermal, elastic, and surface properties on the stability of SiC polytypes;Physical Review B;2022-08-05
3. Defect reduction in SiC epilayers by different substrate cleaning methods;Materials Science in Semiconductor Processing;2022-03
4. A perspective on leakage current induced by threading dislocations in 4H-SiC Schottky barrier diodes;Materials Letters;2022-03
5. The Influence of Tri-Defects of Epitaxial Layers on the Performance of 4H-Sic Diodes;Materials Science Forum;2020-11
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