Process optimizations to recessed e-SiGe source/drain for performance enhancement in 22 nm all-last high-k/metal-gate pMOSFETs

Author:

Qin Changliang,Wang Guilei,Hong Peizhen,Liu Jinbiao,Yin Huaxiang,Yin Haizhou,Ma Xiaolong,Cui Hushan,Lu Yihong,Meng Lingkuan,Xiang Jinjuan,Zhong Huicai,Zhu Huilong,Xu Qiuxia,Li Junfeng,Yan Jian,Zhao Chao,Radamson Henry H.

Funder

Key Laboratory of Microelectronic Devices & Integrated Technology

Institute of Microelectronics, Chinese Academy of Sciences

National Basic Research Program of China

Important National Science & Technology Specific Projects

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

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