Study of sigma-shaped source/drain recesses for embedded-SiGe pMOSFETs-Reference-Cited by-同舟云学术

Study of sigma-shaped source/drain recesses for embedded-SiGe pMOSFETs

Published:2017-09 Issue: Volume:181 Page:22-28
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Qin Changliang,Yin Huaxiang,Wang Guilei,Hong Peizhen,Ma Xiaolong,Cui Hushan,Lu Yihong,Meng Lingkuan,Yin Haizhou,Zhong Huicai,Yan Jiang,Zhu Huilong,Xu Qiuxia,Li Junfeng,Zhao Chao,Radamson Henry H.

Funder

National Key R&D Program of China

Opening Project of Key Laboratory of Microelectronic Devices & Integrated Technology

Institute of Microelectronics

Chinese Academy of Sciences

National Basic Research Program of China

Important National Science & Technology Specific Projects

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. IEDM Tech. Dig;Ghani,2003

2. Selective epitaxy growth of Si1−xGex layers for MOSFETs and FinFETs

3. A Logic Nanotechnology Featuring Strained-Silicon;Thompson;IEEE Electron Device Lett.,2004

4. Evaluation of electron irradiated embedded SiGe source/drain diodes by Raman spectroscopy

5. Optimization of SiGe selective epitaxy for source/drain engineering in 22 nm node complementary metal-oxide semiconductor (CMOS)

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