Impact of pattern dependency of SiGe layers grown selectively in source/drain on the performance of 22nm node pMOSFETs-Reference-Cited by-同舟云学术

Impact of pattern dependency of SiGe layers grown selectively in source/drain on the performance of 22nm node pMOSFETs

Published:2015-12 Issue: Volume:114 Page:43-48
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Wang Guilei,Moeen M.,Abedin A.,Xu Yefeng,Luo Jun,Guo Yiluan,Qin Changliang,Tang Zhaoyun,Yin Haizhou,Li Junfeng,Yan Jiang,Zhu Huilong,Zhao Chao,Chen Dapeng,Ye Tianchun,Kolahdouz M.,Radamson Henry H.

Funder

National S&T Major Project 02

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. In Search of “Forever,” Continued Transistor Scaling One New Material at a Time

2. Optimization of SiGe selective epitaxy for source/drain engineering in 22 nm node complementary metal-oxide semiconductor (CMOS)

3. Integration of highly-strained SiGe materials in 14 nm and beyond nodes FinFET technology

4. FinFET design considerations based on 3-D simulation and analytical modeling

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