Author:
Wang Guilei,Abedin Ahmad,Moeen Mahdi,Kolahdouz Mohammadreza,Luo Jun,Guo Yiluan,Chen Tao,Yin Huaxiang,Zhu Huilong,Li Junfeng,Zhao Chao,Radamson Henry H.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference18 articles.
1. Buhler RT, Martino JA, Agopian PGD, Giacomini R, Simoen E, Claeys C. Fin shape influence on the analog performance of standard and strained MuGFETs. In: 2010 IEEE int SOI conf IEEE; 2010. p. 1–2. .
2. Chiarella T, Witters L, Mercha A, Kerner C, Dittrich R, Rakowski M, et al. Migrating from planar to FinFET for further CMOS scaling: SOI or Bulk? In: 2009 Proc Eur solid state device res conf. IEEE; 2009. p. 85–8. .
3. Van Dal MJH, Collaert N, Doornbos G, Vellianitis G, Curatola G, Pawlak BJ, et al. Highly manufacturable FinFETs with sub-10nm fin width and high aspect ratio fabricated with immersion lithography. In: 2007 IEEE symp VLSI technol. IEEE; 2007. p. 110–1. .
4. Ghani T, Armstrong M, Auth C, Bost M, Charvat P, Glass G, et al. A 90nm high volume manufacturing logic technology featuring novel 45nm gate length strained silicon CMOS transistors. In: IEEE int electron devices meet 2003. IEEE; 2003. p. 11.6.1–3. .
5. Pattern dependency in selective epitaxy of B-doped SiGe layers for advanced metal oxide semiconductor field effect transistors;Hållstedt;J Appl Phys,2008
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