Anisotropic interpolation method of silicon carbide oxidation growth rates for three-dimensional simulation-Reference-Cited by-同舟云学术

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Anisotropic interpolation method of silicon carbide oxidation growth rates for three-dimensional simulation

Published:2017-02 Issue: Volume:128 Page:135-140
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Šimonka Vito,Nawratil Georg,Hössinger Andreas,Weinbub Josef,Selberherr Siegfried

Funder

Austrian Federal Ministry of Science, Research and Economy

National Foundation for Research, Technology and Development

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. Differences in SiC thermal oxidation process between crystalline surface orientations observed by in-situ spectroscopic ellipsometry;Goto;J Appl Phys,2015

2. Hijikata Y. Physics and technology of silicon carbide devices. InTech, Croatia; 2013.

3. Gupta SK, Akhtar J. Thermal oxidation of silicon carbide (SiC)-experimentally observed facts. InTech, China; 2011.

4. Silicon carbide high-power devices;Weitzel;IEEE Trans Electron Dev,1996

5. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: a review;Casady;Solid-State Electron,1996

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