Differences in SiC thermal oxidation process between crystalline surface orientations observed by in-situ spectroscopic ellipsometry
Author:
Affiliation:
1. Division of Mathematics Electronics and Information Sciences, Graduate School of Science and Engineering, Saitama University, 255 Shimo-Okubo, Sakura-ku, Saitama-city, Saitama 338-8570, Japan
Funder
Grants-in-Aid for Scientific Research from Japan Society for the Promotion of Science
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4914050
Reference28 articles.
1. Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide
2. Effects of n-type 4H-SiC epitaxial wafer quality on reliability of thermal oxides
3. Elimination of the Major Deep Levels in n- and p-Type 4H-SiC by Two-Step Thermal Treatment
4. Oxidation-enhanced annealing of implantation-induced Z1/2centers in 4H-SiC: Reaction kinetics and modeling
5. Point defect reduction and carrier lifetime improvement of Si- and C-face 4H-SiC epilayers
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