Differences in SiC thermal oxidation process between crystalline surface orientations observed by in-situ spectroscopic ellipsometry-Reference-Cited by-同舟云学术

Differences in SiC thermal oxidation process between crystalline surface orientations observed by in-situ spectroscopic ellipsometry

Published:2015-03-07 Issue:9 Volume:117 Page:095306
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Goto Daisuke¹,Hijikata Yasuto¹^ORCID,Yagi Shuhei¹,Yaguchi Hiroyuki¹

Affiliation:

1. Division of Mathematics Electronics and Information Sciences, Graduate School of Science and Engineering, Saitama University, 255 Shimo-Okubo, Sakura-ku, Saitama-city, Saitama 338-8570, Japan

Funder

Grants-in-Aid for Scientific Research from Japan Society for the Promotion of Science

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4914050

Reference28 articles.

1. Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

2. Effects of n-type 4H-SiC epitaxial wafer quality on reliability of thermal oxides

3. Elimination of the Major Deep Levels in n- and p-Type 4H-SiC by Two-Step Thermal Treatment

4. Oxidation-enhanced annealing of implantation-induced Z1/2centers in 4H-SiC: Reaction kinetics and modeling

5. Point defect reduction and carrier lifetime improvement of Si- and C-face 4H-SiC epilayers

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