Affiliation:
1. Paul Scherrer Institute
2. TU Wien
3. Silvaco Europe Ltd.
4. ETH Zurich
Abstract
Step-controlled growth of 4H-SiC epitaxial layers leads to the formation of a step-bunched morphology along the surface with larger macrosteps, composed of smaller microsteps of several Si-C bilayer heights. As thermal oxidation is an orientation-dependent process, a multi-faceted surface is expected to exhibit a different oxidation behavior compared to a perfectly planar surface. In this work, step-bunched surfaces after oxidation are investigated by high-resolution atomic force microscopy (HR-AFM) and transmission electron microscopy (TEM) indicating a morphological change in the early stages of thermal oxidation. An orientation-dependent oxidation model is used to correctly describe variations of the oxide thicknesses at isolated macrosteps.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
1 articles.
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