Designing 4H-SiC P-shielding trench gate MOSFET to optimize on-off electrical characteristics

Author:

Kyoung Sinsu,Hong Young-sung,Lee Myung-hwan,Nam Tae-jin

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Silicon carbide power device;Baliga,2009

2. Study of 4H–SiC trench MOSFET structures;Chen;Solid-State Electr,2005

3. Anisotropic interpolation method of silicon carbide oxidation growth rates for three-dimensional simulation;Šimonka;Orig Solid-State Electr,2017

4. An optimized structure of 4H-SiC U-shaped trench gate MOSFET;Wang;IEEE Trans Electr Dev,2015

5. Nakamura T, Nakano Y, Aketa M, Nakamura R, Mitani S, Sakairi H, et al. Proc IEEE international electron devices meeting; 2011. p. 26.5.1–3.

Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Understanding Short-Circuit Failure Mechanism of Double-Trench SiC Power MOSFETs;IEEE Transactions on Electron Devices;2020-12

2. Low on-resistance 4H-SiC UMOSFET with local floating superjunction;Journal of Computational Electronics;2019-11-05

3. Enhancing oxidation rate of 4H–SiC by oxygen ion implantation;Journal of Materials Science;2018-09-18

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