Evolution of low frequency noise and noise variability through CMOS bulk technology nodes from 0.5μm down to 20nm

Author:

Ioannidis E.G.,Haendler S.,Theodorou C.G.,Lasserre S.,Dimitriadis C.A.,Ghibaudo G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Electrical noise as a measure of quality and reliability in electronic devices;Jones;Adv Electron Electron Phys,1993

2. Design considerations for CMOS design near the limits of scaling;Frank;Solid State Electron,2002

3. Takeuchi K, Nagumo T, Yokogawa S, Imai K, Hayashi Y. Single-charge-based modeling of transistor characteristics fluctuations based on statistical measurement of RTN amplitude. In: 2009 Symposium on VLSI technology digest of Technical papers. p. 54–5.

4. The impact of RTN on performance fluctuation in CMOS logic circuits;Ito;Proc IEEE IRPS,2011

5. Impact of dynamic variability on the operation of CMOS inverter;Ioannidis;Electron Lett,2013

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