Impact of dynamic variability on the operation of CMOS inverter-Reference-Cited by-同舟云学术

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Impact of dynamic variability on the operation of CMOS inverter

Published:2013-09 Issue:19 Volume:49 Page:1214-1216
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. lett.

Author:

Ioannidis E.G.¹,Haendler S.²,Manceau J.‐P.³,Dimitriadis C.A.⁴,Ghibaudo G.¹

Affiliation:

1. IMEP‐LAHC LaboratoryMinatec‐INPG3 Parvis Louis Neel38016GrenobleFrance

2. STMicroelectronicsrue Jean Monnet38921CrollesFrance

3. IBM FranceBois‐Colombes92275France

4. Department of PhysicsAristotle University of ThessalonikiThessaloniki54124Greece

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2013.1343

Reference7 articles.

1. Matching properties of MOS transistors;Pelgrom M.J.M.;IEEE J. Solid‐State Circuits,1989

2. Random dopant induced threshold voltage lowering and fluctuations in sub‐0.1 µm MOSFET's: a 3‐D atomistic simulation study;Asenov A.;IEEE Trans. Electron Devices,1998

3. Direct measurement of correlation between SRAM noise margin and individual cell transistor variability by using device matrix array;Hiramoto T.;IEEE Trans. Electron Devices,2011

4. Electrical noise and RTS fluctuations in advanced CMOS devices;Ghibaudo G.;Microelectron. Reliab.,2002

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