The Impact of Polysilicon Gate Doping on the Low Frequency Noise of MOS Transistors-Reference-Cited by-同舟云学术

The Impact of Polysilicon Gate Doping on the Low Frequency Noise of MOS Transistors

Published:2022-02-10 Issue:03 Volume:21 Page:
ISSN:0219-4775
Container-title:Fluctuation and Noise Letters
language:en
Short-container-title:Fluct. Noise Lett.

Author:

Ioannidis Eleftherios G.¹^ORCID,Leisenberger Friedrich P.¹,Rohracher Karl¹,Minixhofer Rainer¹

Affiliation:

1. Department: Corporate Technology / CMOS Processes, ams-OSRAM AG, Tobelbadder Strasse 30 8141, Premstaetten, Austria

Abstract

New results are presented for the low frequency noise (LFN) characterization of N-MOS and P-MOS from a standard CMOS technology node. The impact of n[Formula: see text] and p[Formula: see text] polysilicon gate doping on the LFN for N-MOS and P-MOS devices has been investigated. The results demonstrate that the higher p[Formula: see text] poly doping of the P-MOS improves the noise performance up to a factor of six. The N-MOS device with higher n[Formula: see text] poly doping shows no significant change in the LFN level. It is interesting to note that the effective Coulomb scattering prefactor [Formula: see text] increased for both devices.

Publisher

World Scientific Pub Co Pte Ltd

Subject

General Physics and Astronomy,General Mathematics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0219477522500286

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