Investigation of the electromechanical stability of low temperature polycrystalline silicon thin-film transistors governed by types of stress
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference17 articles.
1. P-128: Stress Absorbing LTPS-TFT for Highly Flexible AMOLED
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1. Thin‐Film Transistors for Integrated Circuits: Fundamentals and Recent Progress;Advanced Functional Materials;2023-10-11
2. A chaos-metastability TRNG for natively flexible IGZO circuits;AEU - International Journal of Electronics and Communications;2023-10
3. Frequency Dependent Degradation and Failure of Flexible a-InGaZnO Thin-Film Transistors Under Dynamic Stretch Stress;IEEE Transactions on Device and Materials Reliability;2023-09
4. Ambient Dependent Degradation Behavior of Flexible Poly-Si TFTs Under Dynamic Stretch Stress;2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA);2023-07-24
5. Origin of Degradation of Flexible Poly-Si TFTs Under Dynamic Bending Stress;IEEE Electron Device Letters;2021-11
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