High-performance p-channel LTPS-TFT using HfO2gate dielectric and nitrogen ion implantation-Reference-Cited by-同舟云学术

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High-performance p-channel LTPS-TFT using HfO2gate dielectric and nitrogen ion implantation

Published:2009-06-19 Issue:7 Volume:24 Page:072001
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Ma Ming-Wen,Chiang Tsung-Yu,Chao Tien-Sheng,Lei Tan-Fu

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. A novel structured polysilicon thin-film transistor that increases the on/off current ratio

2. High-performance polycrystalline-Si thin film transistors formed by using large-angle-tilt implanted drains

3. Performance and reliability improvements in thin-film transistors with rapid thermal N2O annealing

4. Polycrystalline silicon thin film transistors

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1. Low‐Temperature Poly‐Si Thin‐Film Transistor with High‐k ZrAlO_x Gate Insulator with SiO₂ Blocking Layer;Advanced Materials Technologies;2024-08-10

2. Stress relaxation in LTPS TFT backplane by architecture modulation on plastic;Applied Physics A;2019-11-11

3. Investigation of the electromechanical stability of low temperature polycrystalline silicon thin-film transistors governed by types of stress;Solid-State Electronics;2019-10

4. Mobility Enhancement in Polycrystalline Silicon Thin Film Transistors due to the Dehydrogenation Mechanism;Journal of the Korean Physical Society;2018-11

5. High-performance poly-Si TFT with ultra-thin channel film and gate oxide for low-power application;Semiconductor Science and Technology;2015-09-01

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