Performance and reliability improvements in thin-film transistors with rapid thermal N2O annealing
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference34 articles.
1. Development trends of LTPS TFT LCDs for mobile applications
2. 400 dpi integrated contact type linear image sensors with poly-Si TFT's analog readout circuits and dynamic shift registers
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Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effects of NH3 annealing on interface and electrical properties of Gd-doped HfO2/Si stack;Journal of Rare Earths;2013-04
2. Performance improvement with a combined scheme of rapid thermal annealing and multi-channel structure for poly-Si TFTs with various device dimensions;Journal of the Korean Physical Society;2012-10
3. Performance improvement of low-temperature a-SiGe:H thin-film transistors;Solid-State Electronics;2012-10
4. Ultralow-Power TFT With Gate Oxide Fabricated by Nitric Acid Oxidation Method;IEEE Electron Device Letters;2010-08
5. High-performance p-channel LTPS-TFT using HfO2gate dielectric and nitrogen ion implantation;Semiconductor Science and Technology;2009-06-19
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