Ambient Dependent Degradation Behavior of Flexible Poly-Si TFTs Under Dynamic Stretch Stress-Reference-Cited by-同舟云学术

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Ambient Dependent Degradation Behavior of Flexible Poly-Si TFTs Under Dynamic Stretch Stress

Published:2023-07-24 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
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Author:

Hu Yang¹,Zhou Wenjuan¹,Wang Mingxiang¹,Zhang Dongli¹,Wang Huaisheng¹,Shan Qi²

Affiliation:

1. Soochow University,School of Electronic and Information Engineering,Suzhou,China,215006

2. Visionox Technology Inc.,Suzhou,China,215000

Funder

National Natural Science Foundation of China

Natural Science Foundation of Jiangsu Province

Research and Development

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10248978/10248979/10249104.pdf?arnumber=10249104

Reference15 articles.

1. Statistical Study of Degradation of Flexible Poly-Si TFTs Under Dynamic Bending Stress

2. Roles of Gate Voltage and Stress Power in Self-Heating Degradation of a-InGaZnO Thin-Film Transistors

3. Failure mechanism of TFT devices on flexible substrate by cyclic bending test

4. Impact of repeated uniaxial mechanical strain on p-type flexible poly crystalline thin film transistors;chen;Applied Physics Letters,2015

5. H2O Induced Hump Phenomenon in Capacitance–Voltage Measurements of a-IGZO Thin-Film Transistors

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Extrinsic Degradation of Flexible Poly-Si Thin-Film Transistors Under Dynamic Bending Stress;IEEE Transactions on Electron Devices;2024-04

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