Fabrication of high performance thin-film transistors via pressure-induced nucleation

Author:

Kang Myung-Koo,Kim Si Joon,Kim Hyun Jae

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Reference16 articles.

1. Kang, M. K., Kim, S. J. & Kim, H. J. A multi-channel structure to enhance the performance of sequential lateral solidification thin-film transistor. Appl. Phys. Lett. 97, 202103 (2010).

2. Kim, S. J. et al. Artificial DNA nanostructure detection using solution-processed In-Ga-Zn-O thin-film transistors. Appl. Phys. Lett. 100, 103702 (2012).

3. Jung, J. et al. Approaches to label-free flexible DNA biosensors using low-temperature solution-processed In-Zn-O thin-film transistors. Biosens. Bioelectron. 99, 55 (2014).

4. Kim, S. J. et al. Photofield effect and photoresponse properties of the transparent oxide-based BaInZnO thin-film transistors. Sens. Actuator A-Phys. 1, 193 (2013).

5. Lee, K. W. et al. Charge-trap effects of 2D DNA nanostructures implanted in solution-processed InGaZnO thin-film transistor. J. Phys. D: Appl. Phys. 46, 215102 (2013).

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