Assessment of 28 nm UTBB FD-SOI technology platform for RF applications: Figures of merit and effect of parasitic elements-Reference-Cited by-同舟云学术

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Assessment of 28 nm UTBB FD-SOI technology platform for RF applications: Figures of merit and effect of parasitic elements

Published:2016-03 Issue: Volume:117 Page:130-137
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Kazemi Esfeh B.,Kilchytska V.,Barral V.,Planes N.,Haond M.,Flandre D.,Raskin J.-P.

Funder

FNRS

Eniac

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference46 articles.

1. Scalable small-signal modeling of RF CMOS FET based on 3-D EM-based extraction of parasitic effects and its application to millimeter-wave amplifier design;Choi;Microwave Theory Tech IEEE Trans,2009

2. SOI technology: an opportunity for RF designers;Raskin;J Telecommun Inform Technol,2009

3. Substrate crosstalk reduction using SOI technology;Raskin;Electron Dev IEEE Trans,1997

4. RF performance of SOI CMOS technology on commercial 200-mm enhanced signal integrity high resistivity SOI substrate;Ben Ali;Electron Dev IEEE Trans,2014

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1. FD-SOI and RF-SOI technologies for 5G;New Materials and Devices Enabling 5G Applications and Beyond;2024

2. Impact of High Temperature Up to 175 °C on the DC and RF Performances of 22-nm FD-SOI MOSFETs;IEEE Transactions on Electron Devices;2023-10

3. Systematic characterization for RF small-signal parameter extraction of 28 nm FDSOI MOSFETs up to 110 GHz;Microelectronics Journal;2023-08

4. Record Transconductance in L_eff~30 nm Self-Aligned Replacement Gate ETSOI nFETs Using Low EOT Negative Capacitance HfO₂-ZrO₂ Superlattice Gate Stack;2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits);2023-06-11

5. Enhancement in Capacitance and Transconductance in 90 nm nFETs with HfO₂-ZrO₂ Superlattice Gate Stack for Energy-efficient Cryo-CMOS;2022 International Electron Devices Meeting (IEDM);2022-12-03

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