Impact of High Temperature Up to 175 °C on the DC and RF Performances of 22-nm FD-SOI MOSFETs-Reference-Cited by-同舟云学术

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Impact of High Temperature Up to 175 °C on the DC and RF Performances of 22-nm FD-SOI MOSFETs

Published:2023-10 Issue:10 Volume:70 Page:4987-4992
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Halder Arka¹^ORCID,Nyssens Lucas¹^ORCID,Vanbrabant Martin¹^ORCID,Rack Martin¹^ORCID,Lederer Dimitri¹,Kilchytska Valeriya¹^ORCID,Raskin Jean-Pierre¹^ORCID

Affiliation:

1. Université catholique de Louvain, Louvain-la-Neuve, Belgium

Funder

Ecsel JU Project “Beyond5” via EU H2020 and Innoviris (Brussels/Belgium) funding

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10261402/10219437.pdf?arnumber=10219437

Reference17 articles.

1. Ultra-thin body and thin-BOX SOI CMOS technology analog figures of merit

2. Modeling of transconductance degradation and extraction of threshold voltage in thin oxide MOSFET's

3. Specific features of multiple-gate MOSFET threshold voltage and subthreshold slope behavior at high temperatures

4. Trigate nanowire MOSFETs analog figures of merit

5. On the Separate Extraction of Self-Heating and Substrate Effects in FD-SOI MOSFET

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Research on the Latch-Up Mechanism of DSOI at High Temperature;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

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