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Trigate nanowire MOSFETs analog figures of merit

  • Published:2015-10 Issue: Volume:112 Page:78-84
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Kilchytska V.,Makovejev S.,Barraud S.,Poiroux T.,Raskin J.-P.,Flandre D.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of High Temperature Up to 175 °C on the DC and RF Performances of 22-nm FD-SOI MOSFETs;IEEE Transactions on Electron Devices;2023-10

2. 22 nm FD-SOI MOSFET Figures of Merit at high temperatures upto 175 °C;2022 IEEE 22nd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF);2022-01-16

3. On the Separate Extraction of Self-Heating and Substrate Effects in FD-SOI MOSFET;IEEE Electron Device Letters;2021-05

4. Extensive Electrical Characterization Methodology of Advanced MOSFETs Towards Analog and RF Applications;IEEE Journal of the Electron Devices Society;2021

5. On the Application of Junctionless Nanowire Transistors in Basic Analog Building Blocks;IEEE Transactions on Nanotechnology;2021
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