On the Separate Extraction of Self-Heating and Substrate Effects in FD-SOI MOSFET-Reference-Cited by-同舟云学术

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On the Separate Extraction of Self-Heating and Substrate Effects in FD-SOI MOSFET

Published:2021-05 Issue:5 Volume:42 Page:665-668
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Nyssens Lucas^ORCID,Rack M.^ORCID,Halder A.^ORCID,Raskin J.-P.^ORCID,Kilchytska V.^ORCID

Funder

Ecsel JU project Beyond5 through EU H2020 and Innoviris (Brussels/Belgium) funding

Fonds de la Recherche Scientifique - FNRS

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9415873/09395481.pdf?arnumber=9395481

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Cryogenic InGaAs HEMTs with Reduced On-Resistance using Strained Ohmic Contacts;2023 International Electron Devices Meeting (IEDM);2023-12-09

2. Gate Geometry-Dependent Thermal Impedance of Depletion Mode HEMTs;IEEE Transactions on Electron Devices;2023-10

3. Impact of High Temperature Up to 175 °C on the DC and RF Performances of 22-nm FD-SOI MOSFETs;IEEE Transactions on Electron Devices;2023-10

4. Improved self-heating extraction with RF technique at cryogenic temperatures;Solid-State Electronics;2023-09

5. Comparison of Heat Sinks in Back-End of Line to reduce Self-Heating in 22FDX® MOSFETs;Solid-State Electronics;2023-09

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