22 nm FD-SOI MOSFET Figures of Merit at high temperatures upto 175 °C-Reference-Cited by-同舟云学术

22 nm FD-SOI MOSFET Figures of Merit at high temperatures upto 175 °C

Published:2022-01-16 Issue: Volume: Page:
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Container-title:2022 IEEE 22nd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)
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Author:

Halder Arka¹,Nyssens Lucas¹,Rack Martin¹,Lederer Dimitri¹,Kilchytska Valeriya¹,Raskin Jean-Pierre¹

Affiliation:

1. Institute of Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM) Université catholique de Louvain,Louvain-la-Neuve,Belgium

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9720035/9720036/09720052.pdf?arnumber=9720052

Reference11 articles.

1. Design of SOI CMOS operational amplifiers for applications up to 300°C

2. DC-170 GHz Characterization of 22nm FDSOI Technology for Radar Sensor Applications

3. 28-nm FD-SOI CMOS RF Figures of Merit Down to 4.2 K

4. Modeling of transconductance degradation and extraction of threshold voltage in thin oxide MOSFET's

5. Assessment of 28 nm UTBB FD-SOI technology platform for RF applications: Figures of merit and effect of parasitic elements

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of High Temperature Up to 175 °C on the DC and RF Performances of 22-nm FD-SOI MOSFETs;IEEE Transactions on Electron Devices;2023-10

2. Invited Talk #4: SOI CMOS technologies for RF and millimeter-wave communication systems;2022 International Conference on IC Design and Technology (ICICDT);2022-09-21

3. Fully Depleted SOI Technology for Millimeter-Wave Integrated Circuits;IEEE Journal of the Electron Devices Society;2022