Temperature-dependent characteristics of enhancement-/depletion-mode double δ-doped AlGaAs/InGaAs pHEMTs and their monolithic DCFL integrations-Reference-Cited by-同舟云学术

Temperature-dependent characteristics of enhancement-/depletion-mode double δ-doped AlGaAs/InGaAs pHEMTs and their monolithic DCFL integrations

Published:2007-06 Issue:6 Volume:51 Page:882-887
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Huang Jun-Chin,Hsu Wei-Chou,Lee Ching-Sung,Huang Dong-Hai,Huang Ming-Feng

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

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3. 60-GHz MMIC image-rejection down converter using InGaP/InGaAs HEMT;Saito;IEEE GaAs IC Symp,1995

4. Fabrication and characterization of an InAlAs/InGaAs/InP ring oscillator using integrated enhancement- and depletion-mode high-electron mobility transistors;Mahajan;IEEE Electron Dev Lett,1997

5. Direct coupled FET logic (DCFL) circuit for GaAs LSIC application;Xu;ICMMT,1998

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