High-performance double-recessed enhancement-mode metamorphic HEMTs on 4-in GaAs substrates-Reference-Cited by-同舟云学术

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High-performance double-recessed enhancement-mode metamorphic HEMTs on 4-in GaAs substrates

Published:2003-03 Issue:3 Volume:24 Page:135-137
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Dumka D.C.,Tserng H.Q.,Kao M.Y.,Beam E.A.,Saunier P.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/27076/01202505.pdf?arnumber=1202505

Cited by 29 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Homogeneous barrier height temperature dependence of Au/n-type GaAs Schottky diode;Indian Journal of Physics;2023-11-15

2. Electrospun Stacked Dual‐Channel Transistors with High Electron Mobility Using a Planar Heterojunction Architecture;Advanced Electronic Materials;2022-12-07

3. On the Negative Capacitance of the Au/ZnO/n-GaAs Structures in the Capacitance–Voltage Plots at the Accumulation Zone for High Frequencies;Journal of Electronic Materials;2022-05-21

4. Threshold Voltage Engineering of Enhancement-Mode AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors with Different Doping Concentration of In Situ Cl− Doped Al2O3;ECS Journal of Solid State Science and Technology;2021-07-01

5. GaAs metamorphic high electron mobility transistors for future deep space-biomedical-millitary and communication system applications: A review;Microelectronics Journal;2019-10

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