Temperature-Dependent Study of AlGaAs/InGaAs Integrated Depletion/Enhancement-Mode High Electron Mobility Transistors with Virtual Channel Layers
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Link
https://iopscience.iop.org/article/10.1149/2162-8777/ab9b03/pdf
Reference20 articles.
1. Investigations on Al0.2Ga0.8As/In0.2Ga0.8As MOS-pHEMTs with Different Shifted Γ-Gate Structures
2. Effects of Selective and Nonselective Wet Gate Recess on InAlAs∕InGaAs Metamorphic Field-Effect Transistors with Double Delta Doping in InGaAs Channels
3. High Uniformity ( Al0.3Ga0.7 ) 0.5In0.5P / InGaAs Enhancement-Mode Pseudomorphic HEMTs by Selective Succinic Acid Gate Recess
4. Temperature-dependent characteristics of enhancement-/depletion-mode double δ-doped AlGaAs/InGaAs pHEMTs and their monolithic DCFL integrations
5. Process for enhancement/depletion-mode GaAs/InGaAs/AlGaAs pseudomorphic MODFETs using selective wet gate recessing
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1. Investigation on Temperature Behavior for a GaAs E-pHEMT MMIC LNA;Micromachines;2022-07-15
2. Linearity enhancement and noise reduction in a passivated AlGaAs/InGaAs/GaAs high-electron mobility transistor;Journal of the Korean Physical Society;2021-09-28
3. Construction of a low-temperature, highly sensitive H2S sensor based on surfaces and interfaces reaction triggered by Au-doped hierarchical structured composites;Chemical Physics Letters;2021-01
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