Comparative study of quasi-static and normal capacitance–voltage characteristics in amorphous Indium-Gallium-Zinc-Oxide thin film transistors-Reference-Cited by-同舟云学术

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Comparative study of quasi-static and normal capacitance–voltage characteristics in amorphous Indium-Gallium-Zinc-Oxide thin film transistors

Published:2011-02 Issue:1 Volume:56 Page:95-99
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Lee Sangwon,Jeon Yong Woo,Kim Sungchul,Kong Dongsik,Kim Dae Hwan,Kim Dong Myong

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. 3.1: Distinguished Paper: 12.1-Inch WXGA AMOLED Display Driven by Indium-Gallium-Zinc Oxide TFTs Array

3. 42.2: World's Largest (15-inch) XGA AMLCD Panel Using IGZO Oxide TFT

4. Frequency-dependent capacitance-voltage characteristics for amorphous silicon-based metal-insulator-semiconductor structures

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