Frequency-dependent capacitance-voltage characteristics for amorphous silicon-based metal-insulator-semiconductor structures-Reference-Cited by-同舟云学术

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Frequency-dependent capacitance-voltage characteristics for amorphous silicon-based metal-insulator-semiconductor structures

Published:1992 Issue:11 Volume:39 Page:2515-2522
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Choi J.S.,Neudeck G.W.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/16/4237/00163450.pdf?arnumber=163450

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