Influence of annealing in H atmosphere on the electrical properties of Al 2 O 3 layers grown on p -type Si by the atomic layer deposition technique-Reference-Cited by-同舟云学术

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Influence of annealing in H atmosphere on the electrical properties of Al 2 O 3 layers grown on p -type Si by the atomic layer deposition technique

Published:2016-09 Issue: Volume:123 Page:89-95
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Kolkovsky Vl.,Stübner R.,Langa S.,Wende U.,Kaiser B.,Conrad H.,Schenk H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. Very low surface recombination velocity on p-type c-Si by high-rate plasma-deposited aluminum oxide

2. Effective surface passivation of crystalline silicon by rf sputtered aluminum oxide

3. Silicon surface passivation by atomic layer deposited Al2O3

4. Silicon Surface Passivation by Sputtered Aluminium Oxide: Influence of Annealing Temperature and Ambient Gas

5. Process Temperature Dependence of Al2O3Film Deposited by Thermal ALD as a Passivation Layer for c-Si Solar Cells

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4. Passivation and Electrical Properties of Alumina Layers Deposited by Atomic‐Layer Deposition with Different Precursors;physica status solidi (a);2022-05-29

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