Silicon Surface Passivation by Sputtered Aluminium Oxide: Influence of Annealing Temperature and Ambient Gas
Author:
Publisher
The Electrochemical Society
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Passivation and Electrical Properties of Alumina Layers Deposited by Atomic‐Layer Deposition with Different Precursors;physica status solidi (a);2022-05-29
2. Effective suppression of nanotextured black silicon surface recombination channels by aluminum oxide: comparison from sputtered and ALD grown films;Semiconductor Science and Technology;2021-10-12
3. A review of Al2O3 as surface passivation material with relevant process technologies on c-Si solar cell;Optical and Quantum Electronics;2021-01
4. Hydrogen-related defects in Al 2 O 3 layers grown on n -type Si by the atomic layer deposition technique;Physica B: Condensed Matter;2018-04
5. Carrier-selective p- and n-contacts for efficient and stable photocatalytic water reduction;Catalysis Today;2017-07
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